Base Product Number: APT35GP120 ->
Configuration: Single
Current - Collector (Ic) (Max): 64A
Current - Collector Cutoff (Max): 250ВµA
ECCN: EAR99
HTSUS: 8541.29.0095
IGBT Type: PT
Input: Standard
Input Capacitance (Cies) @ Vce: 3.24nF @ 25V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -55В°C ~ 150В°C (TJ)
Package: Tube
Package / Case: ISOTOP
Power - Max: 284W
REACH Status: REACH Unaffected
RoHS Status: RoHS Compliant
Series: POWER MOS 7В® ->
Supplier Device Package: ISOTOPВ®
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 1200V
EU RoHS: Compliant
ECCN (US): EAR99
Part Status: Active
Channel Type: N
Maximum Collector-Emitter Voltage (V): 1200
Maximum Gate Emitter Voltage (V): ±20
Maximum Continuous Collector Current (A): 64
Maximum Gate Emitter Leakage Current (uA): 0.1
Maximum Power Dissipation (mW): 284000
Minimum Operating Temperature (°C): -55
Maximum Operating Temperature (°C): 150
Packaging: Tube
Automotive: No
Pin Count: 4
Standard Package Name: SOT-227
Supplier Package: SOT-227
Military: No
Mounting: Screw
Package Height: 9.6(Max)
Package Length: 38.2(Max)
Package Width: 25.4(Max)
PCB changed: 4
Lead Shape: Screw
Файлы: https://static.chipdip.ru/lib/259/DOC012259303.pdf, https://static.chipdip.ru/lib/305/DOC012305112.pdf
Бренд: Microchip Technology
Discrete Semiconductor Products\Transistors - IGBTs - Modules
IGBT Module PT Single 1200V 64A 284W Chassis Mount ISOTOPВ®
