Base Product Number: IRFP250 ->
Current - Continuous Drain (Id) @ 25В°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Drive Voltage (Max Rds On, Min Rds On): 10V
ECCN: EAR99
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
HTSUS: 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Mounting Type: Through Hole
Operating Temperature: -55В°C ~ 175В°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 18A, 10V
REACH Status: REACH Unaffected
RoHS Status: ROHS3 Compliant
Series: HEXFETВ® ->
Supplier Device Package: TO-247AC
Technology: MOSFET (Metal Oxide)
Vgs (Max): В±20V
Vgs(th) (Max) @ Id: 4V @ 250ВµA
Вес, г: 7.5
Файлы: https://static.chipdip.ru/lib/605/DOC011605869.pdf, https://static.chipdip.ru/lib/569/DOC010569389.pdf
Бренд: Infineon Technologies
N-канал 200V 30A (Tc) 214W (Tc) сквозное отверстие TO-247AC
